Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)
Identifieur interne : 00A702 ( Main/Repository ); précédent : 00A701; suivant : 00A703Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)
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Abstract
Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)</title><author><name sortKey="Wang, Z M" uniqKey="Wang Z">Z. M. Wang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Holmes, K" uniqKey="Holmes K">K. Holmes</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Mazur, Yu I" uniqKey="Mazur Y">Yu. I. Mazur</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0132753</idno><date when="2004-03-15">2004-03-15</date><idno type="stanalyst">PASCAL 04-0132753 AIP</idno><idno type="RBID">Pascal:04-0132753</idno><idno type="wicri:Area/Main/Corpus">00BD10</idno><idno type="wicri:Area/Main/Repository">00A702</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Multilayers</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term><term>Surface morphology</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8107T</term><term>6865A</term><term>8115H</term><term>6847F</term><term>6837P</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Croissance semiconducteur</term><term>Point quantique semiconducteur</term><term>Multicouche</term><term>Epitaxie jet moléculaire</term><term>Morphologie surface</term><term>Microscopie force atomique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Nanostructure evolution during the growth of multilayers of In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In<sub>0.5</sub>Ga<sub>0.5</sub>As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)</s1></fA08><fA11 i1="01" i2="1"><s1>WANG (Z. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>HOLMES (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAZUR (Yu. I.)</s1></fA11><fA11 i1="04" i2="1"><s1>SALAMO (G. J.)</s1></fA11><fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1931-1933</s1></fA20><fA21><s1>2004-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0132753</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Nanostructure evolution during the growth of multilayers of In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In<sub>0.5</sub>Ga<sub>0.5</sub>As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H45</s0></fC02><fC02 i1="05" i2="3"><s0>001B60A16C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8107T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6865A</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6847F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6837P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Multicouche</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Multilayers</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Morphologie surface</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Surface morphology</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fN21><s1>082</s1></fN21><fN47 i1="01" i2="1"><s0>0411M000136</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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